Nikos Pelekanos

• Professor
• Senior member of the Microelectronics Research Group of IESL-FORTH in Heraklion, Crete, Greece.

office

Physics Building

telephone

+302810394107, +302810394136 (lab)

e-mail

pelekano@materials.uoc.gr

Research Interests

His current research interests are

• the design and demonstration of novel optoelectronic devices, such as polariton light emitting devices and lasers, and hybrid structures
• physics and applications of piezoelectric semiconductor quantum dots
• next generation solar cells based on semiconductor nanostructures

Short Curriculum Vitae

Nikos Pelekanos obtained his Ph.D in 1991 from Brown University, USA, where he worked on the optical properties of two-dimensional II-VI compound semiconductors. After a number of post-doctoral stays in various European laboratories, including the France Telecom research center in Lannion and the Max-Planck Institute in Stuttgart, he joined the Semiconductor Physics Laboratory of CEA-Grenoble from 1995 until 2001. He joined the Microelectronics Research group at FORTH in 2001, and the Materials Science and Technology Department of the University of Crete in 2003. He has participated in numerous European, bilateral and national projects. He has coordinated three IST European assessment projects on quaternary nitride and Stark-tunable lasers, and two national PENED projects on "UV-emitters" and "Vertical cavity lasers". He has recently obtained the "Solar Innovation 2010" award, for his proposal on low-dimensional semiconductor solar cells. He has published 160 publications in refereed journals and conference proceedings and holds 6 technical patents.

Representative Publications

• Room temperature GaAs exciton-polariton light emitting diode, S. Tsintzos, P. G. Savvidis, G. Deligeorgis, Z. Hatzopoulos, N. T. Pelekanos, Appl. Phys. Lett. 94, 071109 (2009).
• Internal field effects on the lasing characteristics of InGaN/GaN quantum well lasers, G. E. Dialynas, G. Deligeorgis, M. Zervos, N. T. Pelekanos, J. Appl. Phys. 104, 113101 (2008).
• A GaAs polariton light-emitting diode operating near room temperature, S. Tsintzos, N. T. Pelekanos, G. Konstantinidis, Z. Hatzopoulos, P. G. Savvidis, Nature 453, 372 (2008).
• Reduced threshold current in (111)B grown InGaAs/AlGaAs laser diodes: the positive role of piezoelectric effect, G. Deligeorgis, G. Dialynas, Z. Hatzopoulos, N. T. Pelekanos, Appl. Phys. Lett. 90, 121126 (2007).
• Tunable laser diodes by Stark effect, N. Le Thomas, N.T. Pelekanos, Z. Hatzopoulos, Appl. Phys. Lett. 83, 1304 (2003).
• Direct comparison of recombination dynamics in cubic and hexagonal GaN/AlN quantum dots, J. Simon, N.T. Pelekanos, C. Adelmann, E. Martinez-Guerrero, R. André, B. Daudin, Le Si Dang, H. Mariette, Phys. Rev. B 68, 035312 (2003).
• Widely tunable light-emitting diodes by Stark effect in forward bias, N. Le Thomas, N.T. Pelekanos, Z. Hatzopoulos, E. Aperathitis, R. Hamelin, Appl. Phys. Lett. 81, 1582 (2002).
• Self-assembled zinc blende GaN quantum dots grown by molecular beam epitaxy, E. Martinez-Guerrero, C. Adelmann, F. Chabuel, J. Simon, N.T. Pelekanos, G. Feuillet, B. Daudin, H. Mariette, Appl. Phys. Lett. 77, 809 (2000).
• Spontaneous polarization effects in GaN/AlGaN quantum wells, J. Simon, R. Langer, A. Barski, N.T. Pelekanos, Phys. Rev. B 61, 7211 (2000).
• Giant electric fields in unstrained GaN single quantum wells, R. Langer, J. Simon, V. Ortiz, N.T. Pelekanos, A. Barski, R. André, M. Godlewski, Appl. Phys. Lett. 74, 3827 (1999).
• Blue-light emission from GaN self-assembled quantum dots due to giant piezoelectric effect, F. Widmann, J. Simon, B. Daudin, G. Feuillet, J.L. Rouvière, N.T. Pelekanos, G. Fishman, Phys. Rev. B Rapid Comm. 58, R15989 (1998).
• Growth kinetics and optical properties of self-organized GaN quantum dots, F. Widmann, B. Daudin, G. Feuillet, Y. Samson, J.L. Rouvière, N. Pelekanos, J. Appl. Phys. 83, 7618 (1998).