office
105a (1st floor), Physics Building
telephone
+302810394107, +302810394136 (lab)
e-mail
pelekano@materials.uoc.gr

Research Interests

His current research interests are
  • Quantum dot-based high temperature sources of single and entangled photons.
  • Polariton lasing and parametric scattering at room temperature.
  • Νext generation solar cells based on hybrid halide perovskites and III-V semiconductor nanostructures.

Short Curriculum Vitae

Nikos Pelekanos obtained his Ph.D in 1991 from Brown University (USA), on the optical properties of two-dimensional II-VI compound semiconductors. After a number of post-doctoral stays in various European labs, including the France Telecom Research Center in Lannion and the Max-Planck Institute in Stuttgart, he joined the Semiconductor Physics Laboratory at CEA-Grenoble from 1995 until 2001. Next, he joined the Microelectronics Research group at FORTH in 2001 and the Materials Science and Technology Department of the University of Crete in 2003. His main research theme is the demonstration of novel semiconductor nanophotonic devices. He has coordinated/participated in numerous European, bilateral and national projects. He has obtained the "Solar Innovation 2010" award for his proposal on third-generation low-dimensional semiconductor solar cells, and more recently a Chair of Excellence LANEF, funded by the French government, for a project entitled “Nanowire Innovative Solar Cells”. He has published over 250 publications in refereed journals and conference proceedings and holds 6 technical patents. Extended CV

Representative Publications

  1. Amargianitakis EA, Tsagaraki K, Kostopoulos A, Konstantinidis G, Delamadeleine E, Monroy E and Pelekanos NT, Non-polar GaN/AlGaN quantum-well polariton laser at room temperature, PHYSICAL REVIEW B 104 (12), 125311 (2021).
  2. Aivalioti C, Papadakis A, Manidakis E, Kayambaki M, Androulidaki M, Tsagaraki K, Pelekanos NT, Stoumpos CC, Modreanu M, Craciun G, Romanitan C and Aperathitis E, Transparent All-Oxide Hybrid NiO:N/TiO2 Heterostructure for Optoelectronic Applications, ELECTRONICS 10 (9), 988 (2021).
  3. Amargianitakis EA, Kazazis SA, Doundoulakis G, Stavrinidis G, Konstantinidis G, Delamadeleine E, Monroy E and Pelekanos NT, Transferrable dielectric DBR membranes for versatile GaN-based polariton and VCSEL technology, MICROELECTRONIC ENGINEERING 228 111276 (2020).
  4. Amargianitakis EA, Jayaprakash R, Kalaitzakis FG, Delamadeleine E, Monroy E and Pelekanos NT, Absorption in ultrathin GaN-based membranes: The role of standing wave effects, JOURNAL OF APPLIED PHYSICS 126 (8), 083109 (2019).
  5. Demeridou I, Paradisanos I, Liu YY, Pliatsikas N, Patsalas P, Germanis S, Pelekanos NT, Goddard WA, Kioseoglou G and Stratakis E, Spatially selective reversible charge carrier density tuning in WS2 monolayers via photochlorination, 2D MATERIALS 6 (1), 015003 (2019).
  6. Jayaprakash, R, Kalaitzakis, FG, Christmann, G, Tsagaraki, K, Hocevar, M, Gayral, B, Monroy, E, Pelekanos, NT. "Ultra-low threshold polariton lasing at room temperature in a GaN membrane microcavity with a zero-dimensional trap", SCIENTIFIC REPORTS 7, 5542 (2017).
  7. Tan, SL, Genuist, Y, den Hertog, MI, Bellet-Amalric, E, Mariette, H, Pelekanos, NT. "Highly uniform zinc blende GaAs nanowires on Si(111) using a controlled chemical oxide template", NANOTECHNOLOGY 28, 255602 (2017).
  8. Paradisanos, I, Germanis, S, Pelekanos, NT, Fotakis, C, Kymakis, E, Kioseoglou, G, Stratakis, E. "Room temperature observation of biexcitons in exfoliated WS2 monolayers", APPLIED PHYSICS LETTERS 110, 193102 (2017).
  9. Germanis, S, Katsidis, C, Tsintzos, S, Stavrinidis, A, Konstantinidis, G, Florini, N, Kioseoglou, J, Dimitrakopulos, GP, Kehagias, T, Hatzopoulos, Z, Pelekanos, NT. "Enhanced Stark Tuning of Single InAs (211)B Quantum Dots due to Nonlinear Piezoelectric Effect in Zincblende Nanostructures", PHYSICAL REVIEW APPLIED 6, 014004 (2016).